Ion Beam Modification of Materials (IBMM) allows the electronic, optical, mechanical, or magnetic properties of various materials to be modified in a controlled manner. This is known as functionalizing materials.

This process allows precise control of the composition and structure of materials at the atomic level, paving the way for applications in electronics, biomaterials, and specialized coatings.

Tandetron Linear Accelerator (ALTAÏS)

Capable of generating ion beams composed of any stable element with energies up to 16 Mega electron volts (MeV), the particle accelerator enables the analysis (IBA) and modification (IBMM) of thin layers of numerous materials. 

IBMM

  • Beam line for ion implantation
  • Two implantation energy ranges: 1.5-40 keV – 200 – 16 MeV (ion dependent)
  • Implantation surface area of approximately cm²
  • Wide range of ions for implantation
  • Sample cooling during implantation
Plateforme technologique SIAM - Accélérateur ALTAïS IBMM

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