The XPS technique can be used to detect elements present on the surface of samples, determine their atomic concentration and chemical state (e.g., C-C, C-O, C-F or oxidation states). It is also possible to perform depth profiling to determine the atomic concentration of multilayers.

Facilities

  • K-alpha spectrometer (Thermo): spot size 30-400µm, high counting rate, charge compensation, large sample size (6x6 cm²), depth profile (monoatomic Ar)
  • Escalab 250Xi spectrometer (Thermo): spot size 200-900µm (+2D imaging mode), high counting rate, charge compensation, in-situ heating of samples, UPS, ISS, REELS, depth profiling with Ar clusters

Other related equipment and technologies

Image
Un chercheur effectuant des manipulations sur un équipement de pointe

PECVD, DC, RF, and AC - Plasma treatment

See content
Image
Gros plan sur un équipement de pointe de la plateforme SIAM

ToF-SIMS - Time-of-flight secondary ion mass spectroscopy

See content